linear & power amplifiers - chip 3 3 - 86 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc592 v02.0109 general description features functional diagram the hmc592 is a high dynamic range gaas phemt mmic 1 watt power amplifi er which operates from 10 to 13 ghz. this amplifi er die provides 19 db of gain and +31 dbm of saturated power, at 21% pae from a +7v supply. the rf i/os are dc blocked and matched to 50 ohms for ease of integration into multi- chip-modules (mcms). all data is taken with the chip in a 50 ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). for applications which require optimum oip3, idd should be set for 400 ma, to yield +38 dbm oip3. for applications which require optimum output p1db, idd should be set for 750 ma, to yield +31 dbm output p1db. saturated output power: +31 dbm @ 21% pae output ip3: +38 dbm gain: 19 db dc supply: +7v @ 750 ma 50 ohm matched input/output die size: 2.47 x 1.17 x 0.1 mm electrical specifi cations, t a = +25 c, vdd = +7v, idd = 750 ma* typical applications the hmc592 is ideal for use as a power amplifi er for: ? point-to-point radios ? point-to-multi-point radios ? test equipment & sensors ? military end-use ? space parameter min. typ. max. units frequency range 10 - 13 ghz gain 16 19 db gain variation over temperature 0.05 db/ c input return loss 10 db output return loss 12 db output power for 1 db compression (p1db) 28 31 dbm saturated output power (psat) 31.2 dbm output third order intercept (ip3) [2] 38 dbm supply current (idd) 750 800 ma [1] adjust vgg between -2 to 0v to achieve idd= 750 ma typical. [2] measurement taken at 7v @ 400ma, pin / tone = -15 dbm gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz
linear & power amplifiers - chip 3 3 - 87 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc592 v02.0109 gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 25 30 7 8 9 10 11 12 13 14 15 s21 s11 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 8 9 10 11 12 13 14 +25c +85c -55c return loss (db) frequency (ghz) 23 25 27 29 31 33 9 9.5 10 10.5 11 11.5 12 12.5 13 +25c +85c -55c psat (dbm) frequency (ghz) 23 25 27 29 31 33 9 9.5 10 10.5 11 11.5 12 12.5 13 +25c +85c -55c p1db (dbm) frequency (ghz) -25 -20 -15 -10 -5 0 8 9 10 11 12 13 14 +25c +85c -55c return loss (db) frequency (ghz) 6 8 10 12 14 16 18 20 22 24 26 28 9 9.5 10 10.5 11 11.5 12 12.5 13 +25c +85c -55c gain (db) frequency (ghz)
linear & power amplifiers - chip 3 3 - 88 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com v02.0109 hmc592 gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz power compression @ 8 ghz, 7v @ 750 ma output ip3 vs. temperature 7v @ 400 ma, pin/tone = -15 dbm output im3, 7v @ 400 ma output im3, 7v @ 750 ma 0 15 30 45 60 75 90 -20 -16 -12 -8 -4 0 4 8 9 ghz 10 ghz 11 ghz 12 ghz 13 ghz im3 (dbc) pin/tone (dbm) 0 5 10 15 20 25 30 35 -14 -9 -4 1 6 11 16 pout gain pae pout(dbm), gain (db), pae(%) input power (dbm) 0 15 30 45 60 75 90 -20 -16 -12 -8 -4 0 4 8 9 ghz 10 ghz 11 ghz 12 ghz 13 ghz im3 (dbc) pin/tone (dbm) 24 28 32 36 40 44 9 9.5 10 10.5 11 11.5 12 12.5 13 +25c +85c -55c ip3 (dbm) frequency (ghz) psat vs. current p1db vs. current 23 25 27 29 31 33 9 9.5 10 10.5 11 11.5 12 12.5 13 400ma 500ma 600ma 700ma 750ma psat (dbm) frequency (ghz) 23 25 27 29 31 33 9 9.5 10 10.5 11 11.5 12 12.5 13 400ma 500ma 600ma 700ma 750ma p1db (dbm) frequency (ghz)
linear & power amplifiers - chip 3 3 - 89 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com v02.0109 hmc592 gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz reverse isolation vs. temperature power dissipation -80 -70 -60 -50 -40 -30 -20 -10 0 9 9.5 10 10.5 11 11.5 12 12.5 13 +25c +85c -55c isolation (db) frequency (ghz) gain & power vs. supply voltage @ 8 ghz gain & power vs. supply current @ 8 ghz 12 16 20 24 28 32 36 6.5 7 7.5 gain p1db psat gain (db), p1db (dbm), psat(dbm) vdd supply voltage (vdc) 12 16 20 24 28 32 36 400 450 500 550 600 650 700 750 gain p1db psat gain (db), p1db (dbm), psat(dbm) idd supply current (ma) 3 3.5 4 4.5 5 5.5 6 -14 -10 -6 -2 2 6 10 14 9 ghz 10 ghz 11 ghz 12 ghz 13 ghz power dissipation (w) input power (dbm)
linear & power amplifiers - chip 3 3 - 90 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond pad is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. 8. overall die size .002 die packaging information [1] standard alternate gp-1 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. v02.0109 hmc592 gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz absolute maximum ratings drain bias voltage (vdd) +8 vdc gate bias voltage (vgg) -2.0 to 0 vdc rf input power (rfin)(vdd = +7.0 vdc) +15 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 62.7 mw/c above 85 c) 5.64 w thermal resistance (channel to die bottom) 15.94 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c vdd (v) idd (ma) +6.5 757 +7.0 750 +7.5 745 typical supply current vs. vdd note: amplifi er will operate over full voltage ranges shown above vgg adjusted to achieve idd = 750 ma at +7.0v electrostatic sensitive device observe handling precautions outline drawing
linear & power amplifiers - chip 3 3 - 91 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2, 4, 6 vgg 1-3 gate control for amplifi er. adjust to achieve idd of 750 ma. please follow mmic amplifi er biasing procedure application note. external bypass capacitors of 100 pf and 0.1 f are required. 3, 5, 7 vdd 1-3 power supply voltage for the amplifi er. external bypass capacitors of 100 pf and 0.1 f are required. 8rfout this pad is ac coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground. v02.0109 hmc592 gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz
linear & power amplifiers - chip 3 3 - 92 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram v02.0109 hmc592 gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz
linear & power amplifiers - chip 3 3 - 93 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and fl at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab v02.0109 hmc592 gaas phemt mmic 1 watt power amplifier, 10 - 13 ghz
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